GTU Computer Engineering (Semester 3)
Basic Electronics
June 2015
Total marks: --
Total time: --
INSTRUCTIONS
(1) Assume appropriate data and state your reasons
(2) Marks are given to the right of every question
(3) Draw neat diagrams wherever necessary


1 (a) Explain energy band diagram of insulator, semiconductor and conductor.
7 M
1 (b) Explain Hall Effect.
7 M

2 (a) Explain
(1) Tunnel Diode (2) Photodiode (3)LED.
7 M
2 (b) Explain V-I characteristic of p-n junction.
7 M
2 (c) Explain potential variation within graded semiconductor.
7 M

3 (a) Compare half wave rectifier with full wave rectifier.
7 M
3 (b) A 230V,50Hz.a.c voltage is applied to the primary of a 5:1 step down transformer which is used in a bridge rectifier having a load resistor of value 500Ω.Assuming the diode to be ideal, Determine the following:
(1) d.c output voltage (2) d.c. power delivered to load (3)PIV of each diode (4) output frequency.
7 M
3 (c) Explain all types of clippers with examples.
7 M
3 (d) A half wave rectifier is utilized to supply 20V d.c to a resistive load of 400Ω.The diode used in half wave rectifier has a forward resistance of 40Ω.Determine the maximum value of the a.c voltage required at the input.
7 M

4 (a) Write down typical h-parameter values for CE/CB/CC configurations.
7 M
4 (b) Why bias stabilization is required in transistor? Explain any one method of transistor biasing.
7 M
4 (c) Write down typical h-parameter values for CE/CB/CC configurations.
7 M
4 (d) Explain Miller's theorem.
7 M

5 (a) Compare JFET with MOSET.
7 M
5 (b) Compare class A, class B, class C and class AB amplifiers.
7 M
5 (c) Compare enhancement type MOSFET with depletion type MOSFET
7 M
5 (d) For N-channel JFET,IDSS =20mA,Vp =-8V, and gmo =5000μs.Find the values of the drain current and trans-conductance at Vgs =-4V.
7 M



More question papers from Basic Electronics
SPONSORED ADVERTISEMENTS